High-power GaAs FET (small signal gain stage)
MGF0904A
L & S BAND / 0.
6W non - matched
DESCRIPTION
The MGF0904A, GaAs FET with an N-channel
schottky gate, is designed for MMDS/UMTS/WiMAX applications.
FEATURES
• High output power Po=28.
0dBm(TYP.
) @f=1.
65GHz,Pin=15dBm
• High power gain Gp=13.
0dB(TYP.
) @f=1.
65GHz,Pin=15dBm
• High power added efficiency P.
A.
E=40%(TYP.
) @f=1.
65GHz,Pin=15dBm
APPLICATION
• MMDS/UMTS/WiMAX
QUALITY
• GG
Packaging
• 4 inch Tray (25 pcs)
RECOMMENDED BIAS CONDITIONS
• Vds=8V • Ids=200mA • Rg=500Ω
Absolute maximum ratings
Symbol
Parameter
VGDO VGSO ID IGR IGF PT*1 Tch Tstg
Gate to Drain Voltage Gate to source voltage Drain current Reverse gate current Forward ...