DatasheetsPDF.com

MGF0909A

Mitsubishi
Part Number MGF0909A
Manufacturer Mitsubishi
Description L /S BAND POWER GaAs FET
Published Apr 29, 2005
Detailed Description MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION The MGF0909A, GaAs FET with an N-chann...
Datasheet PDF File MGF0909A PDF File

MGF0909A
MGF0909A

Overview
MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
OUTLINE DRAWING Unit:millimeters FEATURES • High output power P1dB=38dBm(TYP.
) • High power gain GLP=11dB(TYP.
) • High power added efficiency ηadd=45%(TYP.
) @f=2.
3GHz,P1dB=20dBm @f=2.
3GHz,Pin=20dBm 2 1 @f=2.
3GHz 2 0.
6±0.
2 ø2.
2 3 APPLICATION For UHF Band power amplifiers 5.
0 QUALITY GRADE • GG RECOMMENDED BIAS CONDITIONS • VDS=10V • ID=1.
3A • Rg=100Ω • Refer to Bias Procedure 9.
0±0.
2 14.
0 1 GATE 2 SOURCE 3 DRAIN GF-7 ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGSO VGDO ID IGR IGF PT Tch Tstg *1:TC=25˚...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)