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MGF0906B

Mitsubishi
Part Number MGF0906B
Manufacturer Mitsubishi
Description High-power GaAs FET
Published Apr 29, 2005
Detailed Description < High-power GaAs FET (small signal gain stage) > MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs...
Datasheet PDF File MGF0906B PDF File

MGF0906B
MGF0906B

Overview
< High-power GaAs FET (small signal gain stage) > MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for L & S band applications.
FEATURES • Class A operation • High output power P1dB=37.
0dBm(T.
Y.
P) @f=2.
3GHz • High power gain GLP=11.
0dB(TYP.
) @f=2.
3GHz • High power added efficiency P.
A.
E=40%(TYP.
) @f=2.
3GHz,P1dB • Hermetically sealed metal-ceramic package with ceramic lid APPLICATION • For L & S band power amplifiers QUALITY • IG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=1.
2A • Rg=100Ω Absolute maximum ratings Symbol Parameter VGDO Gate to Source Voltage VGSO Gate to source voltage ID Drain Current IG...


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