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MGF0907B

Part Number	MGF0907B
Manufacturer	Mitsubishi
Description	High-power GaAs FET
Published	Apr 29, 2005
Detailed Description	< High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND /10W non - matched DESCRIPTION The MGF0907B, GaAs...
Datasheet	MGF0907B PDF File

Overview

< High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND /10W non - matched DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use L & S band applications.
FEATURES • Class A operation • High output power P1dB=40.
0dBm(T.
Y.
P) @f=2.
3GHz • High power gain GLP=10.
0dB(TYP.
) @f=2.
3GHz • High power added efficiency P.
A.
E=37%(TYP.
) @f=2.
3GHz,P1dB • Hermetically sealed metal-ceramic package with ceramic lid APPLICATION • For L & S band power amplifiers QUALITY • IG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=2.
4A • Rg=50Ω Absolute maximum ratings Symbol Parameter VGDO Gate to Source Voltage VGSO Gate to source voltage ID Drain Current ...

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