Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BUT11AI
GENERAL DESCRIPTION
Enhanced performance, high speed switching
npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching
regulators, motor control systems etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector Saturation current Inductive fall time CONDITIONS VBE = 0 V TYP.
2.
5 0.
08 MAX.
100...