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BUT11

Power Innovations Limited
Part Number BUT11
Manufacturer Power Innovations Limited
Description NPN SILICON POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description BUT11 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q ...
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BUT11
BUT11

Overview
BUT11 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.
MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
SYMBOL VCBO VCES VCEO V EBO IC ICM Ptot Tj Tstg VALUE 850 850 400 10 5 10 100 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C PRODUCT INFORMATION Information is current as of publication date.
Products conform to specifications in accordance with the terms of Power Innovations standard warranty.
Production processing does not necessarily include testing of all parameters.
1 BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES IEBO hFE VCE(sat) V BE(sat) ft Cob Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance IC = 0.
1 A TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 IC = 0 IC = 0.
5 A IC = IC = 3A 3A (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) f= 1 MHz 12 110 20 TC = 125°C (see Note 2) MIN 400 50 500 1 60 1.
5 1.
3 V V MHz pF TYP MAX UNIT V µA mA VCE = 850 V V CE = 850 V VEB = VCE = IB = IB = VCE = VCB = 10 V 5V 0.
6 A 0.
6 A 10 V 20 V IC = 0.
5 A IE = 0 f = 0.
1 MHz NOT...


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