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BUT11

Bourns Electronic Solutions
Part Number BUT11
Manufacturer Bourns Electronic Solutions
Description NPN SILICON POWER TRANSISTOR
Published Nov 3, 2006
Detailed Description www.DataSheet4U.com BUT11 NPN SILICON POWER TRANSISTOR ● ● ● Rugged Triple-Diffused Planar Construction 100 W at 25°C...
Datasheet PDF File BUT11 PDF File

BUT11
BUT11

Overview
www.
DataSheet4U.
com BUT11 NPN SILICON POWER TRANSISTOR ● ● ● Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.
MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
SYMBOL VCBO VCES V CEO VEBO IC ICM Ptot Tj Tstg VALUE 850 850 400 10 5 10 100 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C PRODUCT DataSheet 4 U .
com INFORMATION 1 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
www.
DataSheet4U.
com BUT11 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance IC = 0.
1 A TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 IC = 0 IC = 0.
5 A IC = IC = 3A 3A (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) f= 1 MHz 12 110 20 TC = 125°C (see Note 2) MIN 400 50 500 1 60 1.
5 1.
3 V V MHz pF TYP MAX UNIT V µA mA VCE = 850 V VCE = 850 V VEB = VCE = IB = IB = VCE = VCB = 10 V 5V 0.
6 A 0.
6 A 10 V 20 V IC = 0.
5 A IE = 0 f = 0.
1 MHz NOTES: 2.
Inductive loop switching measurement.
3.
These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4.
These parameters must be measured using voltage-sensing ...


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