DatasheetsPDF.com

BUT11

Part Number	BUT11
Manufacturer	NXP
Description	Silicon diffused power transistors
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product speciﬁcation Supersedes da...
Datasheet	BUT11 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product speciﬁcation Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product speciﬁcation Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package.
APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems.
PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter MBK106 BUT11; BUT11A andbook, halfpage handbook, halfpage 2 1 MBB008 3 1 2 3 Fig.
1 Simplified outline (TO-220AB) and symbol.
QUICK REFERENCE DATA SYMBOL VCESM BUT11 BUT11A VCEO collector-emitter voltage BUT11 BUT11A VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig.
4 Tmb ≤ 25 °C; see Fig.
3 resistive load; see Figs 11 and 12 open base 400 450 1.
5 5 10 100 0.
8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX.
UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.
25 UNIT K/W 1997 Aug 13 1 Philips Semiconductors Product speciﬁcation Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCESM BUT11 BUT11A VCEO collector-emitter voltage BUT11 BUT11A IC ICM IB IBM Ptot Tstg Tj collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature junction temperature tp < 2 ms Tmb ≤ 25 °C; see Fig.
3 see Figs 2 and 4 tp < 2 ms; see Fig.
4 open base − − − − − − − −65 − PARAMETER collector-emitter peak voltage VBE = 0 − − CONDITIONS BUT11; BUT11A MIN.
MAX.
850 1000 400 450 5 10 2 4 100 +150 150 V V V V A A A A W UNIT °C °C handbook, halfpage 5 MGB895...

Similar Datasheet

BUT100 HIGH POWER NPN SILICON TRANSISTOR - STMicroelectronics
BUT100 NPN Transistor - INCHANGE
BUT11 Silicon diffused power transistors - NXP
BUT11 NPN SILICON POWER TRANSISTOR - Power Innovations Limited
BUT11 NPN SILICON POWER TRANSISTOR - TRSYS
BUT11 NPN SILICON TRANSISTOR - Wing Shing Computer Components
BUT11 NPN SILICON POWER TRANSISTOR - Bourns Electronic Solutions
BUT11 SILICON POWER TRANSISTOR - SavantIC
BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - STMicroelectronics
BUT11A Silicon diffused power transistors - NXP

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)