BUT12
GENERAL DESCRIPTION
SILICON DIFFUSED POWER
TRANSISTOR
Highvoltage,high-speed switching
npn transistors in a metal envelope ,primarily for use in switching power circuits.
TO-220
QUICK REFERENCE DATA
SYMBOL
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time
CONDITIONS VBE = 0V
MIN
Tmb 25 IC = 6.
0A; IB = 1.
2A f = 16KHz IC=6A,IB1=-IB2=1.
2A,VCC=150V
MAX 850 400 8 20 100 1.
5
1.
0
UNIT V V A A W V A V s
LIMITING VALUES
SYMBOL
VCESM VC...