BUZ45A
Semiconductor
Data Sheet
October 1998
File Number 2258.
1
8.
3A, 500V, 0.
800 Ohm, N-Channel Power MOSFET
Features
• 8.
3A, 500V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.
800Ω (BUZ45 field effect
transistor designed for applications such as • SOA is Power Dissipation Limited A) switching
regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds
transistors requiring high speed and low gate drive power.
(8.
3A, • Linear Transfer Characteristics This type can be operated directly from integrated circuits.
500V, • High Input Impedance 0.
800 Formerly developmenta...