BUZ76A
Semiconductor
Data Sheet
October 1998
File Number 2265.
1
2.
6A, 400V, 2.
500 Ohm, N-Channel Power MOSFET
Features
• 2.
6A, 400V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 2.
500Ω (BUZ76 field effect
transistor designed for applications such as • SOA is Power Dissipation Limited A) switching
regulators, switching converters, motor drivers, /Sub• Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
ject • Linear Transfer Characteristics (2.
6A, This type can be operated directly from integrated circuits.
• High Input Impedance 400V, Formerly developmental type...