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BUZ71

Comset Semiconductors
Part Number BUZ71
Manufacturer Comset Semiconductors
Description N-Channel Enhancement Mode Power MOS Transistors
Published Dec 11, 2012
Detailed Description SEMICONDUCTORS BUZ71 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. The...
Datasheet PDF File BUZ71 PDF File

BUZ71
BUZ71

Overview
SEMICONDUCTORS BUZ71 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package.
They are intended for use in switched mode power supplies, motor control, welding, DC-DC & DC-AC converters, and in general purpose switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS http://www.
DataSheet4U.
net/ Symbol VDS IDS IDM IAR EAS EAR VGS RDS(on) PT tJ tstg Ratings Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Single pulse ID = 14 A, VDD = 25 V, RGS = 25 Ω, L= 30.
6 µH, Tj = 25°C Avalanche Energy, Periodic Limited by Tjmax Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range Value 50 14 56 14 6 1 20 0.
1 40 -55 to +150 -55 to +150 Unit V A mJ V Ω W °C THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Thermal Resistance, junction-case Thermal Resistance, junction-ambient Value 3.
1 75 Unit K/W 01/10/2012 COMSET SEMICONDUCTORS 1/3 datasheet pdf - http://www.
DataSheet4U.
net/ SEMICONDUCTORS BUZ71 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VDSS VGS(th) IDSS Ratings Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current Gate-Source leakage Current Drain-Source on Resistance Test Condition(s) ID= 250 µA, VGS= 0 V ID=1 mA, VGS= VDS VDS= 50 V, VGS= 0 V Tj= 25 °C VDS= 50 V, VGS= 0 V Tj= 125 °C VGS= 20 V, VDS= 0 V ID= 9 A, VGS= 10 V Min 50 2.
1 - Typ 3 0.
08 Max 4 1 Unit V V µA 100 100 0.
1 nA Ω IGSS RDS(on) DYNAMIC CHARACTERISTICS Symbol gfs CISS COSS CRSS td(on) tr td(off) tf Ratings Transconductance Input Capacitance Output Capacitance Reverse transfer Capacitance Turn-on Delay Time Rise time Turn-off Delay Time Fall Time Test Condition(s) http://www.
DataSheet4U.
net/ Min 4 - Typ 7.
7 450 220 85 20 40 55 40 Max Unit 600 350 150 30 60 70 55 pF S VDS = 2*ID*RDS(on)max ID= 9 A VGS= ...


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