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BUZ71

Siemens Semiconductor Group
Part Number BUZ71
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 71 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D...
Datasheet PDF File BUZ71 PDF File

BUZ71
BUZ71

Overview
BUZ 71 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 71 VDS 50 V ID 14 A RDS(on) 0.
1 Ω Package TO-220 AB Ordering Code C67078-S1316-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 14 Unit A ID IDpuls 56 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 14 1 mJ ID = 14 A, VDD = 25 V, RGS = 25 Ω L = 30.
6 µH, Tj = 25 °C Gate source voltage Power dissipation 6 VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Tj Tstg RthJC RthJA -55 .
.
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+ 150 -55 .
.
.
+ 150 ≤ 3.
1 ≤ 75 E 55 / 150 / 56 °C K/W Semiconductor Group 07/96 BUZ 71 Not for new design Electrical Characteristics, at Tj = 25°C, unless o...


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