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BUZ70

Siemens Semiconductor Group
Part Number BUZ70
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 70 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ...
Datasheet PDF File BUZ70 PDF File

BUZ70
BUZ70

Overview
BUZ 70 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 70 VDS 60 V ID 12 A RDS(on) 0.
15 Ω Package TO-220 AB Ordering Code C67078-S1334-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A ID IDpuls 48 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12 1 mJ ID = 12 A, VDD = 25 V, RGS = 25 Ω L = 48.
6 µH, Tj = 25 °C Gate source voltage Power dissipation 6 VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Tj Tstg RthJC RthJA -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 3.
1 75 E 55 / 150 / 56 °C K/W Semiconductor Group 07/96 BUZ 70 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
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