Philips Semiconductors
N-channel TrenchMOS
transistor Logic level FET
Product specification
BSS123
FEATURES
• ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package
SYMBOL
g
d s
QUICK REFERENCE DATA
VDSS = 100 V ID = 150 mA RDS(ON) ≤ 6 Ω (VGS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect
transistor in a plastic
envelope
using
’trench’
technology.
Applications:• Relay driver • High-speed line driver • Telephone ringer
The BSS123 is supplied in the SOT23 subminiature surface mounting package.
PINNING
PIN DESCRIPTION 1 gate 2 source 3 drain
SOT23
3 Top view
12
LIMITING VALUES
Limiting values in ac...