May 1995
BSS138 N-Channel Logic Level Enhancement Mode Field Effect
Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
0.
22 A, 50V.
RDS(ON) = 3.
5Ω @ VGS = 10V.
High density cell design for extremely low RDS(ON).
Rugged and Relaible Compact industry standard SOT-23...