BSS84 — P-Channel Enhancement Mode Field-Effect
Transistor
February 2013
BSS84 P-Channel Enhancement Mode Field-Effect
Transistor
Features
-0.
13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal
Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
D
D
S
SOT-23
G
G
Absolute Maximum Ratings
S
Description
This P-channel enhancement-mode field-effect
transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology.
This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching.
The BSS84 can be used, with a minimum of effort, in most ap...