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BS108

200 VOLTS N-CHANNEL TMOS

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS108/D Logic Level TMOS BS108 ® 1 DRAIN N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requi...

Motorola Inc

View BS108 Datasheet

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