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BS107

Motorola Inc
Part Number BS107
Manufacturer Motorola Inc
Description TMOS Switching(N-Channel-Enhancement)
Published Mar 23, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N–Channel — Enhancement 2 GATE ...
Datasheet PDF File BS107 PDF File

BS107
BS107

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N–Channel — Enhancement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 ± 20 ± 30 250 500 350 – 55 to 150 mW °C Unit Vdc Vdc Vpk mAdc 1 2 3 CASE 29–04, STYLE 30 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0) Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IDSS V(BR)DSX IGSS VGS(Th) rDS(on) — — — — — — 4.
5 4.
8 28 14 6.
0 6.
4 — 200 — — — 0.
01 30 — 10 nAdc Vdc nAdc ON CHARACTERISTICS(2) Gate Threshold Voltage (ID...


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