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BS107A

NXP
Part Number BS107A
Manufacturer NXP
Description N-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor Product specification Fi...
Datasheet PDF File BS107A PDF File

BS107A
BS107A

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No second breakdown DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
PINNING - TO-92 1 2 3 = = = source gate drain QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tcase = 25 °C Drain-source ON-resistance ID = 250 mA; VGS = 10 V Transfer admittance ID = 250 mA; VGS = 25 V  Yfs RDS(on) VDS ± VGSO ID Ptot BS107A max.
max.
max.
max.
typ.
max.
200 V 20 V 250 mA 0.
6 W 4.
5 Ω 6.
4 Ω 200 mS 350 mS min.
typ.
...


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