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BS107

NXP
Part Number BS107
Manufacturer NXP
Description N-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification Fil...
Datasheet PDF File BS107 PDF File

BS107
BS107

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown.
DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope.
Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
PINNING - TO-92 variant PIN 1 2 3 gate drain DESCRIPTION source Fig.
1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS VGSth ID RDSon PARAMETER drain-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance MAX.
200 2.
4 150 28 BS107 UNIT V V mA Ω handbook, halfpage d 1 2 3 g MAM146 s April 1995 2 Philips Semiconductors Product spe...


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