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BFY183

Part Number BFY183
Manufacturer Infineon Technologies AG
Description HiRel NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFY183 HiRel NPN Silicon RF Transistor BFY183(ES) Features 4  For low noise, high-gain broadband amplifiers at col...
Datasheet BFY183





Overview
BFY183 HiRel NPN Silicon RF Transistor BFY183(ES) Features 4  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  Hermetically sealed microwave package  fT= 8GHz F = 2.
3 dB at 2 GHz 1 Product validation  Space Qualified ESCC Detail Spec.
No.
: 5611/006 Type Variant No.
05 Description ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type Comment Pin Configuration 1 2 3 4 BFY183(ES) BFY183(P)1 For flight use C E B E Not for flight use1 1 (P) parts have the same fit, form and function as (ES) parts, no screening acc.
to Chart F3 in ESCC Generic Specification No.
5010 3...






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