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BFY180

Part Number	BFY180
Manufacturer	Siemens Semiconductor Group
Description	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
Published	Mar 23, 2005
Detailed Description	HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at coll...
Datasheet	BFY180 PDF File

Overview

HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.
2 to 2.
5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.
5 GHz, F = 2.
6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec.
No.
: 5611/006 BFY 180 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 180 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E Package Micro-X1 (ql) Quality Level: P: Professional Quality, Ordering Code: Q97301013 Ordering Code: on request Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q97111419 (see Chapter Order Instructions for ordering example) Table 1 Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS £ 176 °C 2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction soldering point 2) 1) 2) Maximum Ratings Symbol Limit Values 8 15 15 2 4 0.
5 1) 30 200 - 65 É + 200 - 65 É + 200 < 805 Unit V V V V mA mA mW °C °C °C K/W VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS The maximum permissible base current for VFBE measurements is 3 mA (spot-measurement duration < 1 s).
TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Draft A04 1998-04-01 BFY 180 Electrical Characteristics Table 2 Parameter Collector-base cutoff current VCB = 10 V, IE = 0 Collector-emitter cutoff current VCE = 8 V, IB = 0.
05 mA 3) Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 Base-emitter forward voltage IE = 3 mA, IC = 0 DC current gain IC = 0.
25 mA, VCE = 1 V 3) DC Characteristics at TA = 25 °C unless otherwise specified Symbol min.
Limit Values typ.
100 max.
100 50 50 25 0.
5 1 175 mA mA nA mA mA V 30 Unit...

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