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BFY183

Infineon Technologies AG
Part Number BFY183
Manufacturer Infineon Technologies AG
Description HiRel NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFY183 HiRel NPN Silicon RF Transistor BFY183(ES) Features 4  For low noise, high-gain broadband amplifiers at col...
Datasheet PDF File BFY183 PDF File

BFY183
BFY183

Overview
BFY183 HiRel NPN Silicon RF Transistor BFY183(ES) Features 4  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  Hermetically sealed microwave package  fT= 8GHz F = 2.
3 dB at 2 GHz 1 Product validation  Space Qualified ESCC Detail Spec.
No.
: 5611/006 Type Variant No.
05 Description ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type Comment Pin Configuration 1 2 3 4 BFY183(ES) BFY183(P)1 For flight use C E B E Not for flight use1 1 (P) parts have the same fit, form and function as (ES) parts, no screening acc.
to Chart F3 in ESCC Generic Specification No.
5010 3 2 Package Micro-X1 Datasheet www.
infineon.
com Please read the Important Notice and Warnings at the end of this document 1 of 6 IFAG PSS RFS D2 HIR Issue 5, January 2022 HiRel NPN Silicon RF Transistor BFY183(ES) Table of contents Table of contents Features 1 Product validation .
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1 Description .
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1 Table of contents .
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2 1 Maximum ratings 3 2 Thermal characteristics .
4 3 Electrical characteristics 5 4 Package outlines .
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