DatasheetsPDF.com

BFY181

Part Number	BFY181
Manufacturer	Siemens Semiconductor Group
Description	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
Published	Mar 23, 2005
Detailed Description	HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadba...
Datasheet	BFY181 PDF File

Overview

HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.
5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.
2 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec.
No.
: 5611/006 BFY 181 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 181 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E Package Micro-X1 (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1607 Ordering Code: on request Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702F1715 (see Chapter Order Instructions for ordering example) Table 1 Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS £ 137 °C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction soldering point 2) 1) 2) 2) Maximum Ratings Symbol Limit Values 12 20 20 2 20 2 1) Unit V V V V mA mA mW °C °C °C K/W VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS 175 200 - 65 É + 200 - 65 É + 200 < 360 The maximum permissible base current for VFBE measurements is 15 mA (spot-measurement duration < 1 s).
TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Draft A04 1998-04-01 BFY 181 Electrical Characteristics Table 2 Parameter Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 V, IB = 0.
1 mA 3) Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 Base-emitter forward voltage IE = 15 mA, IC = 0 DC current gain IC = 5 mA, VCE = 6 V 3) DC Characteristics at TA = 25 °C unless otherwise specified Symbol min.
Limit Values typ.
100 max.
100 100 50 25 0.
5 1...

Similar Datasheet

BFY180 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) - Siemens Semiconductor Group
BFY180 HiRel NPN Silicon RF Transistor - Infineon Technologies AG
BFY181 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) - Siemens Semiconductor Group
BFY181 HiRel NPN Silicon RF Transistor - Infineon Technologies AG
BFY182 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) - Siemens Semiconductor Group
BFY182 HiRel NPN Silicon RF Transistor - Infineon Technologies AG
BFY183 HiRel NPN Silicon RF Transistor - Siemens Semiconductor Group
BFY183 HiRel NPN Silicon RF Transistor - Infineon Technologies AG
BFY193 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.) - Siemens Semiconductor Group
BFY193 HiRel NPN Silicon RF Transistor - Infineon Technologies AG

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)