DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFY50; BFY51; BFY52
NPN medium power
transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22
Philips Semiconductors
Product specification
NPN medium power
transistors
FEATURES • High current (max.
1 A) • Low voltage (max.
35 V).
APPLICATIONS • General purpose industrial applications.
DESCRIPTION
NPN medium power
transistor in a TO-39 metal package.
1 handbook, halfpage 2
BFY50; BFY51; BFY52
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
3 2
3
MAM317
1
Fig.
1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-bas...