BFY90
MECHANICAL DATA Dimensions in mm (inches)
4.
95 (0.
195) 4.
52 (0.
178) 4.
95 (0.
195) 4.
52 (0.
178)
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
5.
33 (0.
210) 4.
32 (0.
170)
0.
48 (0.
019) 0.
41 (0.
016) dia.
12.
7 (0.
500) min.
DESCRIPTION
The BFY90 is a low noise
transistor intended for use in broad and narrow-band amplifiers up to 1GHz.
2.
54 (0.
100) Nom.
4 3 2 1
TO72
Pin 1 – Emitter Pin 2 –Base Pin 3 – Collector Pin 4 – Connected to Case
ABSOLUTE MAXIMUM RATINGS
VCBO VCER VCEO VEBO IC(AV) ICM Ptot Tj Tstg, Collector – Base Voltage
(TA= 25°C unless otherwise stated)
30V 30V 15V 2.
5v 25mA 50mA 200mW°C 200°C –65 to +200°C
Collector – Emitter Voltage (RBE £ 50W ) Collector – Emitter Voltage Emi...