DISCRETE SEMICONDUCTORS
DATA SHEET
BLV12 VHF power
transistor
Product specification September 1991
Philips Semiconductors
Product specification
VHF power
transistor
FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Excellent reliability • Withstands full load mismatch.
DESCRIPTION
NPN silicon planar epitaxial
transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap.
It is designed for common emitter, class-B operation in mobile VHF transmitters with a supply voltage of 12.
5 V.
All leads are isolated from the mounting flange.
PINNING - SOT123 PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
handbook, halfpage
BLV12
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