DISCRETE SEMICONDUCTORS
DATA SHEET
BLV194 UHF power
transistor
Product specification January 1993
Philips Semiconductors
Product specification
UHF power
transistor
FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistor intended for common emitter class-AB operation in the 900 MHz communications band.
The
transistor has a SOT171 flange envelope with a ceramic cap.
All leads are isolated from the mounting base.
PINNING - SOT171 PIN 1 2 3 4 5 6 DESCRIPTION emitter emitter base collector emitter emitter WARNING Product and environmental safety - toxic materials Fig.
1 Sim...