DISCRETE SEMICONDUCTORS
DATA SHEET
M3D076
BLV59 UHF linear power
transistor
Product specification Supersedes data of March 1993 1998 Jan 09
Philips Semiconductors
Product specification
UHF linear power
transistor
FEATURES • Internal input matching to achieve an optimum wideband capability and high power gain • Emitter-ballasting resistors for lower junction temperatures • Titanium-platinum-gold metallization ensures long life and excellent reliability.
APPLICATIONS • UHF linear amplifiers in television transmitters.
DESCRIPTION
NPN silicon planar epitaxial power
transistor encapsulated in a 6-lead SOT171A flange package with a ceramic cap.
All leads are isolated from the flange.
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