DISCRETE SEMICONDUCTORS
DATA SHEET
BLV90 UHF power
transistor
Product specification February 1996
Philips Semiconductors
Product specification
UHF power
transistor
DESCRIPTION
NPN silicon planar epitaxial
transistor designed for use in mobile radio transmitters in the 900 MHz band.
FEATURES
BLV90
• diffused emitter-ballasting resistors for an optimum temperature profile.
• gold metallization ensures excellent reliability.
• the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.
6).
The
transistor has a 4-lead envelope with a ceramic cap (SOT-172D).
All leads are isolated from the mounting base.
QUICK REFERENCE...