Part Number
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BF1009SR |
Manufacturer
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Infineon Technologies AG |
Description
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Silicon N-Channel MOSFET Tetrode |
Published
|
Mar 23, 2005 |
Detailed Description
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BF1009S...
Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating vo...
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Datasheet
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BF1009SR
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Overview
BF1009S.
.
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Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network
Drain AGC HF Input G2 G1 HF Output + DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF1009S BF1009SR
Maximum Ratings Parameter
Package SOT143 SOT143R 1=S 1=D 2=D 2=S
Pin Configuration 3=G2 3=G1 4=G1 4=G2 Value 12 25 10 3 200 200 Tstg Tch -55 .
.
.
150 150
Marking JLs JLs
Unit V mA V mW
Symbol VDS ID ±IG1/2SM +VG1SE Ptot
Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF1009S, BF1009SR TS ≤ 9...
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