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BF1009SW

Infineon
Part Number BF1009SW
Manufacturer Infineon
Description Silicon N-Channel MOSFET Tetrode
Published Feb 11, 2014
Detailed Description BF1009SW Silicon N-Channel MOSFET Tetrode  For low noise, high gain controlled 3 4 input stages up to 1GHz  Operatin...
Datasheet PDF File BF1009SW PDF File

BF1009SW
BF1009SW

Overview
BF1009SW Silicon N-Channel MOSFET Tetrode  For low noise, high gain controlled 3 4 input stages up to 1GHz  Operating voltage 9V  Integrated bias network Drain AGC HF Input G2 G1 HF Output + DC 2 1 VPS05605 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009SW Maximum Ratings Parameter Drain-source voltage Marking JLs 1=D Pin Configuration 2=S 3 = G1 4 = G2 Package SOT343 Unit V mA V mW °C Symbol VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch Value 12 25 10 3 200 -55 .
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150 150 Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, TS  76 °C Storage temperature Channel temperature Thermal Resistance Channel - soldering point1) Rthchs 280 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 Jun-28-2001 Free Datasheet http://www.
datasheet4u.
net/ BF1009SW E...


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