DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D071
BFG590; BFG590/X
NPN 5 GHz wideband
transistors
Product specification Supersedes data of 1995 Sep 19 1998 Oct 02
Philips Semiconductors
Product specification
NPN 5 GHz wideband
transistors
BFG590; BFG590/X
FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability.
APPLICATIONS • MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range • Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive.
PINNING DESCRIPTION PIN BFG590 1 2 3 4 collector base emitter emitter BFG590/X collector emitter base emitt...