BFP 180W
NPN Silicon RF
Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.
2 to 2.
5mA
fT = 7GHz
• F = 2.
1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 180W RDs Q62702-F1500 1=E 2=C 3=E 4=B
Package SOT-343
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 8 10 10 2 4 0.
5 mW 30 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 785 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 126 °C
Junction temperatu...