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BFP180W

Infineon Technologies AG
Part Number BFP180W
Manufacturer Infineon Technologies AG
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFP 180W NPN Silicon RF Transistor  For low-power amplifier in mobile 3 4 communication systems (pager) at collector ...
Datasheet PDF File BFP180W PDF File

BFP180W
BFP180W

Overview
BFP 180W NPN Silicon RF Transistor  For low-power amplifier in mobile 3 4 communication systems (pager) at collector currents from 0.
2 mA to 2.
5 mA f T = 7 GHz  F = 2.
1 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 180W Maximum Ratings Parameter Marking RDs 1=E Pin Configuration 2=C 3=E 4=B Package SOT-343 Unit V Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 8 10 10 2 4 0.
5 30 150 -65 .
.
.
150 -65 .
.
.
150 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS 126°C 1) Junction temperature Ambient temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point RthJS  785 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-12-1999 BFP 180W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 8 V Symbol min.
Values typ.
max.
Unit 2 Oct-12-1999 BFP 180W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
AC characteristics (verified by random sampling) Transition frequency IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.
5 V, f = 1 MHz Noise figure IC = 1 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.
8 GHz Power gain, maximum stable F) IC = 1 mA, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz f = 1.
8 GHz Transducer gain f = 900 MHz f = 1.
8 GHz IC = 1 mA, VCE = 5 V, ZS = ZL = 50 , |S21e|2 9 7 15 11.
5 Gms 2.
1 2.
25 F Ceb 0...


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