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BFP180

Siemens Semiconductor Group
Part Number BFP180
Manufacturer Siemens Semiconductor Group
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector curren...
Datasheet PDF File BFP180 PDF File

BFP180
BFP180

Overview
BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.
2 to 2.
5mA fT = 7GHz • F = 2.
1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 180 RDs Q62702-F1377 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 8 10 10 2 4 0.
5 mW 30 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 875 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 124 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Nov-22-1996 BFP 180 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 8 100 - V µA 100 nA 100 µA 1 30 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V Semiconductor Group 2 Nov-22-1996 BFP 180 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
AC Characteristics Transition frequency Values typ.
max.
Unit fT 5 7 0.
19 0.
27 0.
13 - GHz pF 0.
35 dB 2.
1 2.
25 - IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 5 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.
5 V, VCB = vcb = 0 , f = 1 MHz Noise figure F IC = 1 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz f = 1.
8 GHz Power gain 1) Gms IC = 1 mA, VCE = 5 V, ZS = ZSopt ZL = Z...


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