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BFP181

Part Number	BFP181
Manufacturer	Infineon Technologies AG
Description	Low Noise Silicon Bipolar RF Transistor
Published	Mar 23, 2005
Detailed Description	Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 m...
Datasheet	BFP181 PDF File

Overview

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.
5 mA to 12 mA • fT = 8 GHz, NFmin = 0.
9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available 3 4 BFP181 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP181 Marking Pin Configuration RFs 1 = C 2 = E 3 = B 4 = E - - Package SOT143 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 75 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 12 20 20 2 20 2 175 150 -55 .
.
.
150 V mA mW °C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 430 1TS is measured on the collector lead at the soldering point of the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) K/W 1 2013-10-15 BFP181 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V, pulse measured V(BR)CEO 12 - -V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 70 100 140 - 2 2013-10-15 BFP181 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
AC Characteristics (verified by random sampling) Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded fT 6 8 Ccb - 0.
19 0.
4 Unit GHz pF Collector emitter capacitance V...

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