BFP 180W
NPN Silicon RF
Transistor
For low-power amplifier in mobile
3 4
communication systems (pager) at collector currents from 0.
2 mA to 2.
5 mA f T = 7 GHz
F = 2.
1 dB at 900 MHz
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP 180W
Maximum Ratings Parameter
Marking RDs 1=E
Pin Configuration 2=C 3=E 4=B
Package SOT-343
Unit V
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 8 10 10 2 4 0.
5 30 150 -65 .
.
.
150 -65 .
.
.
150
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS 126°C 1) Junction temperature Ambient temperat...