BFP 181W
NPN Silicon RF
Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.
5mA to 12mA • fT = 8GHz
F = 1.
45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 181W RFs Q62702-F1501 1=E 2=C 3=E 4=B
Package SOT-343
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 20 2 mW 175 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 340 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 91 °C
Junction temperature Ambient temper...