BFP183R
NPN Silicon RF
Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 28 mA
fT = 8 GHz
F = 1.
2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP183R
Maximum Ratings Parameter
Marking RHs 1=E
Pin Configuration 2=C 3=E 4=B
Package SOT143R
Unit V
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 65 5 250 150 -65 .
.
.
150 -65 .
.
.
150
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 76 °C 1) Junction temperature Ambient temperature Storage temperature
mA mW °C
Thermal ...