BFP 183W
NPN Silicon RF
Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.
2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 183W RHs Q62702-F1503 1=E 2=C 3=E 4=B
Package SOT-343
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 .
.
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+ 150 - 65 .
.
.
+ 150 ≤ 205 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 58 °C
Junction temperature Ambient tempe...