N-Channel Power Mosfet
Production specification N-Channel Enhancement Mode Field Effect Transistor BL3402 FEATURES Electrostatic Sensitive Devices. VDS (V) = 30V ID = 4 A RDS(ON) 55mΩ (VGS = 10V) RDS(ON) 70mΩ (VGS = 4.5V) RDS(ON) 110mΩ (VGS = 2.5V) Pb Lead-free APPLICATIONS N-channel enhancement mode effect transistor. Switching application. ORDERING INFORMA...
GME