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BL3400

GME
Part Number BL3400
Manufacturer GME
Description N-Channel Power Mosfet
Published May 18, 2018
Detailed Description Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400 FEATURES  Electrostatic Sensitive ...
Datasheet PDF File BL3400 PDF File

BL3400
BL3400

Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400 FEATURES  Electrostatic Sensitive Devices.
 VDS (V) = 30V  ID = 5.
7A（VGS = 10V）  RDS(ON) < 26.
5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.
5V) RDS(ON) < 48mΩ (VGS = 2.
5V) Pb Lead-free APPLICATIONS  N-channel enhancement mode effect transistor.
 Switching application.
ORDERING INFORMATION Type No.
Marking BL3400 3400 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 30 VGSS ID IDM PD RθJA Gate -Source voltage Continuous Drain CurrentA Pulsed Drain Current a ±12 @ TA = 25 ℃ 5.
7 @ TA = 70 ℃ 4.
7 25 Power Dissipation 1.
4 Thermal resistance,Junction-to-Ambient 70 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V A A W ℃/W ℃ C273 Rev.
A www.
gmesemi.
com 1 Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400 ELECTRICAL CHARACTER...


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