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BL3407

GME
Part Number BL3407
Manufacturer GME
Description P-Channel Power Mosfet
Published May 18, 2018
Detailed Description Production specification P-Channel Enhancement Mode Field Effect Transistor BL3407 FEATURES  Electrostatic Sensitive ...
Datasheet PDF File BL3407 PDF File

BL3407
BL3407

Overview
Production specification P-Channel Enhancement Mode Field Effect Transistor BL3407 FEATURES  Electrostatic Sensitive Devices.
 VDS (V) = - 30V  ID = - 4.
1  RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.
5V) Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.
 Switching application.
ORDERING INFORMATION Type No.
Marking BL3407 3407 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -30 VGSS ID IDM PD RθJA Gate -Source voltage ±20 Continuous Drain CurrentA @ TA = 25 ℃ @ TA = 70 ℃ Pulsed Drain Current a Power Dissipation @ TA = 25 ℃ @ TA = 70 ℃ Thermal resistance,Junction-to-Ambient -4.
1 -3.
5 -20 1.
4 1 90 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V A A W ℃/W ℃ C301 Rev.
A www.
gmesemi.
com 1 Production specification P-Channel Enhancement Mode Field Effect Transistor BL3407 ELECTRICAL CHARACTERISTIC...


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