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BL3401

GME
Part Number BL3401
Manufacturer GME
Description P-Channel High Density Trench MOSDET
Published Jul 2, 2015
Detailed Description P-Channel High Density Trench MOSDET FEATURES z Super high dense cell trench design for low RDS(ON). z Rugged and Relia...
Datasheet PDF File BL3401 PDF File

BL3401
BL3401

Overview
P-Channel High Density Trench MOSDET FEATURES z Super high dense cell trench design for low RDS(ON).
z Rugged and Reliable.
Pb Lead-free APPLICATIONS z P-channel enhancement mode effect transistor.
z Switching application.
Production specification BL3401 ORDERING INFORMATION Type No.
Marking BL3401 A19TF SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM IS Gate -Source voltage Drain Current-Continuous a -Pulseb @ TA = 25 ℃ Drain-Source Diode Forward Current a PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -25 ±12 -4.
2 -16 -2.
2 1.
25 75 -55 to +150 Units V V A A W ℃/W ℃ C194 Rev.
A www.
gmicroelec.
com 1 Production specification P-Channel High Density Trench MOSDET BL3401 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT STATIC PARAMETERS Drain-So...


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