:
SILICON
PNP TRIPLE DIFFUSED TYPE
33
POWER AMPLIFIER, SWITCHING CIRCUIT AND
REGULATOR APPLICATIONS.
FEATURES
.
High Gain and Excellent hFE Linearity: hFE=15(Min.
) @ VC E=-2V, Ic=-3A
Low Saturation Voltage: VcE(sat)=-1.
0V(Max.
)
@ I C=-4A, Ib=-0.
4A
Unit in mm
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Peak
Base Current
Collector Power Dissipation (Tc=25°C)Derate Linearly above 25 & C
Junction Temperature
% Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC I CM IB
L Stg
RATING -80 -80 -7 -10 -15 -4 150 0.
86 200
-65~ 200
UNIT
u w/ c
1.
BASE 2.
EMITTER
COLLECTOR (CASE)
TO—2 4MA/T0—
TC—...