SILICON
NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH VOLTAGE AMPLIFIER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEQ=300V (2SC505)
: VCEO=200V (2SC506)
2SC505' 2SC506,
Unit in mm
S& 9.
39 MAX
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
2SC505 2SC506
SYMBOL v CBO
RATING 300 200
UNIT V
Collector- Emitter Voltage
2SC505 2SC506
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V CEO
v EBO ic IB pC T
i
Tstg
300 V 200
3V
1.
EMITTER 2.
BASE
200 mA
3.
COLLECTOR (CASE)
50 mA JEDEC
600 mW
TO-39
175 °C
TC-5, TB-5B
-65M.
75
°C
TOSHIBA
EL...