SILICON
NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS.
VIDEO AMPLIFIER APPLICATIONS.
HIGH SPEED SWITCHING APPLICATIONS.
FEATURES
• High Transition Frequency : fx=200MHz (Typ-) • Low Output Capacitance : C b=3.
5pF (Typ.
) • Low Saturation Voltage
: V CE ( sat )=0.
3V (Max.
) at I c=100mA, I B =10mA • Complementary to 2SA594.
MAXIMUM RATINGS
(Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL VcBO VcEO VEBO
Collector Current
Base Current
Collector Power Dissipation Junction Temperature
Ta=25°C Tc=25°C
Storage Temperature Range
ic IB PC TJ Tstg
RATING 60
UNIT V
45 V
5V
200 mA
50 mA
750 mW 5W
175 °C
-65VL...