2N702 (SILICON) 2N703
CASE 22
(TO·18)
NPN silicon annular
transistors designed for lowlevel, high-speed switching applications.
MAXIMUM RATINGS (T.
" 25'C unless otherwise noted)
Rating
Collector·Emitter Voltage
Collector·aase Voltage
Emitter·aase Voltage
Collector Current
Total Device Dissipation @TA = 25' C Derate above 25' C
Total Device Dissipation @TC = 25' C Derate above 25' C
Operating and Storage Junction Tem~_erature Range
Symbol Value Unit
VCEO
25
Vdc
Vca 25 Vdc
YEa
5.
0
Vdc
IC 50 mAdc
PD PD Tstg
300 roW 2.
0 mW/'C 600 mW 4.
0 mW/'C .
65 to .
.
.
175 'c
ELECTRICAL CHARACTERISTICS (T.
" 25'C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitte...